By Geoffrey Wilkinson
ISBN-10: 0080359507
ISBN-13: 9780080359502
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13b. Under illumination, the buffer space charge can partly balance the absorber space charge. As a result, the band bending in the buffer layer is reduced. 13, we see that this barrier is reduced for the case σp σn . 2). 12 Solution curves to show the influence of capture cross sections of deep acceptor states in the absorber. 5G illumination in short circuit. (a) Equal capture cross sections of electrons and holes of σp = σn = 10−15 cm−2 . 2 Position z [µm] and electron capture cross section σn = 10−15 cm−2 .
Not all combinations, however, are practical and useful. 14 can be described by the parameters Ec , Ev , and dmin . The effect of a back surface gradient is to decrease minority carrier recombination at the back contact. This leads to an increased photo current and decreased diode current. The impact of a back surface gradient becomes larger for a smaller distance between back contact and collecting junction. The relevant quantity for the discussion of bandgap gradients is the current density of the minority carriers.
10). Jn and Jp are dependent on z but Jdiode is independent of z. 16 (a) Schematic presentation of the most critical recombination paths in a heterostructure solar cell. Recombination (1) at the absorber surface, (2) in the absorber bulk, (3) at the absorber back contact, and (4) in the absorber space charge region. Also, a recombination path in the buffer layer is indicated (5). (b) Sketch of tunneling enhanced recombination (1∗ ) for interface and (4∗ ) SCR recombination. By tunneling, the density of holes which contribute to a particular recombination path may be increased.
Comprehensive coordination chemistry. Indexes by Geoffrey Wilkinson
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